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Lower reflectivity and higher minority carrier lifetime of hand-tailored porous silicon

Zhang Nansheng Ma Zhongquan Zhou Chengyue He Bo

半导体学报2009，Vol.30Issue(7)：13-16,4.

半导体学报2009，Vol.30Issue(7)：13-16,4.DOI:10.1088/1674-4926/30/7/072004

Lower reflectivity and higher minority carrier lifetime of hand-tailored porous silicon

Zhang Nansheng ¹Ma Zhongquan ¹Zhou Chengyue ¹He Bo¹

作者信息

1. SHU-SolarE R&D Laboratory, Department of Physics, Shanghai University, Shanghai 200444, China
折叠

摘要

Abstract

con layer is measured to be ～3.19 μs. These values are very close to the reflectivity and the minority carrier lifetime of Si3N4 as a passivation layer on a bulk silicon-based solar cell (0.33% and 3.03/μs, respectively).

关键词

porous silicon/reflectivity/minority carder lifetime

Key words

porous silicon/reflectivity/minority carder lifetime

引用本文复制引用

Zhang Nansheng,Ma Zhongquan,Zhou Chengyue,He Bo..Lower reflectivity and higher minority carrier lifetime of hand-tailored porous silicon[J].半导体学报,2009,30(7):13-16,4.

基金项目

Project supported by the National Natural Science Foundation of China (No. 60876045) and the Innovation Foundation of ShanghaiEducation Committee (No. 08YZ12). （No. 60876045）

半导体学报

OA北大核心CSCDCSTPCDEI

ISSN：1674-4926

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