电子器件2001，Vol.24Issue(2)：132-135,4.
二氧化锡薄膜的最佳掺杂含量理论表达式
The Expression of Optimum Doping Content
of Stannic Oxide Thin Films
摘要
Abstract
The stannic oxide thin films have numerous applications. The problems of optimum doping content for antimony-doped and fluorine-doped stannic oxide thin films are discussed in this paper. The model has been set up and the theoretical expression is given, the optimum doping content are obtained and they are in accordance with the experimental results.关键词
二氧化锡/透明导电薄膜/最佳掺杂含量分类
信息技术与安全科学引用本文复制引用
范志新,陈玖琳,孙以材..二氧化锡薄膜的最佳掺杂含量理论表达式[J].电子器件,2001,24(2):132-135,4.
