半导体学报2007，Vol.28Issue(9)：1333-1336,4.
采用场板和B+离子注入边缘终端技术的Ti/4H-SiC肖特基势垒二极管
Ti/4H-SiC Schottky Barrier Diodes with Field Plate and B+ Implantation Edge Termination Technology
摘要
Abstract
This paper describes the fabrication and electrical characteristics of Ti/4H-SiC Schottky barrier diodes(SBDs). The ideality factor n = 1.08 and effective Schottky barrier height (ψ)= 1.05eV of the SBDs were measured with the method of forward current density-voltage (J-V). A low reverse leakage current below 5.96 × 10-3A/cm2 at a bias voltage of - 1.1kV was obtained. By using B+ implantation, an amorphous layer as the edge termination was formed. We used the PECVD SiO2 as the field plate dielectric. The SBDs have an on-statk current density cm2.关键词
碳化硅/肖特基势垒二极管/理想因子/势垒高度/离子注入Key words
4H-SiC/Schottky barrier/ideal factor/barrier height/implantation分类
信息技术与安全科学引用本文复制引用
陈刚,李哲洋,柏松,任春江..采用场板和B+离子注入边缘终端技术的Ti/4H-SiC肖特基势垒二极管[J].半导体学报,2007,28(9):1333-1336,4.基金项目
Project supported by the National Key Laboratory of Monolithic Integrated Circuits and Modules Foundation of China (No. 9140C140401) 单片集成电路与模块国家级重点实验室基金资助项目(批准号:9140C140401) （No. 9140C140401）
