含能材料2007，Vol.15Issue(2)：134-136,147,4.
原子发射光谱双谱线法测量半导体桥(SCB)等离子体温度
Measurement of the Semiconductor Bridge (SCB) Plasma Temperature by the Double Line of Atomic Emission Spectroscopy
摘要
Abstract
A system consisting of two interference filters of different wavelength and two photo-multiplier detectors was used to measure the time evolution of the SCB plasma temperature based on the double line of atomic emission spectroscopy. The highest temporal resolution of the apparatus was 0.1 μs. The results show that when the voltage is 24 - 32 V and all capacitances are 68 μF, the highest temperature and duration of the SCB plasma increases from 2710 K to 3880 K and from 170.7 μs to 283.4 μs, respectively.关键词
应用化学/SCB等离子体/原子发射光谱法/温度测定Key words
applied chemistry/SCB plasma/emission spectroscopy/temperature measurement引用本文复制引用
冯红艳,李艳,张琳,吴蓉,王俊德,朱顺官..原子发射光谱双谱线法测量半导体桥(SCB)等离子体温度[J].含能材料,2007,15(2):134-136,147,4.基金项目
National Natural Science Foundation (20175008) and Young Scholar Foundation of Nanjing University of Science and Technology(Njust200303) （20175008）
