半导体学报2006，Vol.27Issue(8)：1351-1354,4.
垂直腔面发射激光器中的侧向氧化
Lateral Oxidation in Vertical Cavity Surface Emitting Lasers
刘文莉 1郝永芹 1王玉霞 1姜晓光 1冯源 1李海军 1钟景昌1
作者信息
- 1. 长春理工大学高功率半导体激光重点实验室,长春,130022
- 折叠
摘要
Abstract
Lateral oxidation in vertical cavity surface emitting lasers (VCSELs) is described,and its characteristics are investigated.A linear growth law is found for stripe mesas.However,oxide growth (above 435℃) follows a nonlinear law for the two geometry mesa structures which we employ in VCSEL.Theoretical analysis indicates that mesa structure geometry influences oxide growth rate at higher temperatures.关键词
侧向氧化/量子阱/垂直腔面发射激光器Key words
lateral oxidation/quantum well/vertical cavity surface emitting laser分类
信息技术与安全科学引用本文复制引用
刘文莉,郝永芹,王玉霞,姜晓光,冯源,李海军,钟景昌..垂直腔面发射激光器中的侧向氧化[J].半导体学报,2006,27(8):1351-1354,4.
