半导体学报2006，Vol.27Issue(8)：1360-1366,7.
CuPc/SiO2表面界面的电子状态研究
AFM and XPS Study on the Surface and Interface States of CuPc and SiO2 Films
陈金伙 1王永顺 1朱海华 1胡加兴 1张福甲1
作者信息
- 1. 兰州大学物理科学与技术学院,兰州,730000
- 折叠
摘要
Abstract
A CuPc/SiO2 sample is fabricated.Its morphology is characterized by atomic force microscopy,and the electron states are investigated by X-ray photoelectron spectroscopy.In order to investigate these spectra in detail,all of these spectra are normalized to the height of the most intense peak,and each component is fitted with a single Gaussian function.Analysis shows that the O element has great bearing on the electron states and that SiO2 layers produced by spurting technology are better than those produced by oxidation technology.关键词
CuPc/SiO2/X射线光电子能谱/表面界面分析Key words
CuPc/SiO2/X-ray photoelectron spectroscopy/surface and interface analysis分类
信息技术与安全科学引用本文复制引用
陈金伙,王永顺,朱海华,胡加兴,张福甲..CuPc/SiO2表面界面的电子状态研究[J].半导体学报,2006,27(8):1360-1366,7.
