半导体学报2001，Vol.22Issue(11)：1364-1368,5.
蒙特卡罗方法模拟金属-半导体接触的直接隧穿效应
Direct Tunneling Effect in Metal-Semiconductor Contacts Simulated with Monte Carlo Method
摘要
Abstract
Considering the tunneling effect and the Schottky effect, the metal-semiconductor contact is simulated by using self-consistent ensemble Monte Carlo method. Under different biases or at different barrier heights ,the investigation into the tunneling current indicates that the tunneling effect is of great importance under reverse biases.he Schottky barrier diode current due to Schottky effect is in agreement with the theoretical one. The barrier lowering is found a profound effect on the current transport at the metal-semiconductor interface.关键词
蒙特卡罗器件模拟/金属-半导体接触/直接隧穿/Schottky效应PACC:7340J/J115Q分类
数理科学引用本文复制引用
..蒙特卡罗方法模拟金属-半导体接触的直接隧穿效应[J].半导体学报,2001,22(11):1364-1368,5.基金项目
The authors would like to thank Dr.ZHANG Jin-yu from Fujitsu R&D Center Co.Ltd. For his useful assistance. This work is supported by Fujitsu Ltd. （）
