发光学报2002，Vol.23Issue(2)：137-144,8.
退火温度对a-Se0.70Ge0.15Sb0.15薄膜的结构和光学性质的影响
Effect of Annealing Temperature on the Optical Properties of a-Se0.70 Geo.15 Sb0.15 Thin Films
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作者信息
- 1. Basic Science of Engineering, Faculty of Engineering Shebin El-Kom, Minufiya University, Egypt;Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt;Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt
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摘要
Abstract
Thin films of amorphous bulk Se0.70 Ge0.15 Sb0.15 system are deposited on a quartz and glass substrates at 300K by the thermal evaporation technique. The amorphous films were annealed at 370 and 470K in vacuum ～ 10-4Pa for 1h. The as-deposited and annealed films were checked by X-ray diffraction. On annealing at 470K(in the same time and vacuum), the films revealed crystalline nature. The optical constants such as refractive index( n ), absorption coefficient (α) and extinction coefficient (k) were determined from the measured transmittance and reflectance at normal incidence of light in the wavelength range 300～2 500nm. It was found that both( n ) and (k) depend markedly on the temperature of heat treatment. The analysis of the optical data gave non-direct band gaps(Enong)of 1.715 + 0.021, 1,643 + 0.021 and 1.572 + 0.021eV for as-deposited, 370K and 470K annealed samples respectively. The annealing temperatures are decreased the band gap(Enong)and increasing the band-tail(Ee). This effect is interpreted in terms of the density of state model in amorphous solids proposed by Mott and Davis. The Wemple-DiD omenico single oscillator model parameterizes for as-deposited and annealed films are determined.关键词
多晶/Se0.70Ge0.15Sb0.15薄膜/光学特性/退火Key words
amorphous/Se0.70Ge0.15Sb0.15 thin film/optical property/annealing分类
数理科学引用本文复制引用
..退火温度对a-Se0.70Ge0.15Sb0.15薄膜的结构和光学性质的影响[J].发光学报,2002,23(2):137-144,8.
