半导体学报2001，Vol.22Issue(11)：1377-1381,5.
钕离子注入单晶硅光致发光的起源
Origin of Photoluminescence of Neodymium-Implanted Silicon
摘要
Abstract
Neodymium is incorporated into single crystalline silicon on MEVVA (Metal Vapor Vacuum Arc) ion source. At room temperature, strong ultra-violet and visible fluorescence are observed at the excitation wavelength of 220nm. Luminescence intensity increases with the increase of ion fluence. XPS results manifest that Si-O, NdO, Si Si and O-O bonds exist in the implanted layers. Luminescence mainly results from the radiation transition in the intra-4f shell of Nd3+ ion. The defects' and damages' contribution to the luminescence is also presented.关键词
光致发光/离子注入/稀土分类
信息技术与安全科学引用本文复制引用
肖志松,徐飞,张通和,易仲珍,程国安..钕离子注入单晶硅光致发光的起源[J].半导体学报,2001,22(11):1377-1381,5.基金项目
国家自然科学基金资助项目(59671051). （59671051）
