量子电子学报2000，Vol.17Issue(2)：139-144,6.
ZnSe单晶薄膜生长控制和掺杂控制
MBE and Dopping Control of ZnSe Single Crystal Films
王善忠 1谢绳武 1庞乾骏 1郑杭 1夏宇兴 1姬荣斌 2巫艳 2杨建荣 2于梅芳 2杜美容 2乔怡敏 2郭世平 2何力2
作者信息
- 1. 上海交通大学应用物理系,光电材料与光电器件实验室上海 200030
- 2. 中国科学院上海技术物理研究所,半导体薄膜材料研究中心上海 200083
- 折叠
摘要
Abstract
It is compulsory to realize the accurate control of the growth process of each material layer before a ZnSe-based laser diode could be fabricated, such as crystal quality control, doping level control and growth rate control. ZnSe is the fundamental material for blue/green laser diodes. Reported here are the primary results of an attempt on the crystal quality control, the doping level control and the growth rate control of ZnSe by MBE technology.关键词
ZnSe/MBE/生长控制/掺杂控制Key words
ZnSe/MBE/growth control/doping control分类
信息技术与安全科学引用本文复制引用
王善忠,谢绳武,庞乾骏,郑杭,夏宇兴,姬荣斌,巫艳,杨建荣,于梅芳,杜美容,乔怡敏,郭世平,何力..ZnSe单晶薄膜生长控制和掺杂控制[J].量子电子学报,2000,17(2):139-144,6.
