半导体学报2007，Vol.28Issue(1)：1-4,4.
利用水平热壁CVD法生长的3C-SiC/Si的均匀性
Uniformity Investigation in 3C-SiC Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD
李家业 1赵永梅 1刘兴昉 1孙国胜 1罗木昌 1王雷 1赵万顺 1曾一平 1李晋闽1
作者信息
- 1. 中国科学院半导体研究所,北京,100083
- 折叠
摘要
Abstract
50mm 3C-SiC epilayers are grown on (100) and (111) Si substrates in a newly developed horizontal low-pressure hot-wall CVD reactor under different growth pressures and flow rates of H2 carrier gas.The structure,electrical properties,and thickness uniformity of the 3C-SiC epilayers are investigated by X-ray diffraction (XRD),sheet resistance measurement,and spectroscopic ellipsometry.XRD patterns show that the 3C-SiC films have excellent crystallinity.The narrowest full widths at half maximum of the SiC(200) and (111) peaks are 0.41° and 0.21°,respectively.The best electrical uniformity of the 50mm 3C-SiC films obtained by sheet resistance measurement is 2.15%.A σ/mean value of ±5.7% in thickness uniformity is obtained.关键词
3C-SiC/异质外延生长/水平热壁CVD/均匀性Key words
3C-SiC/heteroepitaxial growth/horizontal hot-wall CVD/uniformity分类
信息技术与安全科学引用本文复制引用
李家业,赵永梅,刘兴昉,孙国胜,罗木昌,王雷,赵万顺,曾一平,李晋闽..利用水平热壁CVD法生长的3C-SiC/Si的均匀性[J].半导体学报,2007,28(1):1-4,4.
