首页|期刊导航|半导体学报|Visible photoluminescence of porous silicon covered with an HfON dielectric layer

Visible photoluminescence of porous silicon covered with an HfON dielectric layer

Jiang Ran Zhang Yan

半导体学报2009，Vol.30Issue(8)：14-17,4.

半导体学报2009，Vol.30Issue(8)：14-17,4.DOI:10.1088/1674-4926/30/8/082003

Visible photoluminescence of porous silicon covered with an HfON dielectric layer

Jiang Ran ¹Zhang Yan²

作者信息

1. School of Physics,Shandong University,Jinan 250100,China
2. School of Information Science and Engineering,Shandong University,Jinan 250100,China
折叠

摘要

Abstract

fect was observed to be greatly weakened for the incorporation of HfON.

关键词

hafnium oxynitride/dielectrics/diffusion/luminescence/porosity

Key words

hafnium oxynitride/dielectrics/diffusion/luminescence/porosity

分类

信息技术与安全科学

引用本文复制引用

Jiang Ran,Zhang Yan..Visible photoluminescence of porous silicon covered with an HfON dielectric layer[J].半导体学报,2009,30(8):14-17,4.

基金项目

Project supported by the China Postdoctoral Science Foundation (No. 20080431176), the Shandong Special Fund for Postdoctoral Inno-vative Project (No. 200702027), and the Doctoral Fund of the Ministry of Education of China (No. 200804221006). （No. 20080431176）

半导体学报

OA北大核心CSCDCSTPCDEI

ISSN：1674-4926

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