半导体学报2008，Vol.29Issue(8)：1445-1448,4.
8GHz带有RC稳定网络的AIGaN/GaN HEMTs内匹配功率合成放大器的设计
An 8GHz Internally Matched AlGaN/GaN HEMT Power Amplifier with RC Stability Network
曾轩 1刘新宇 1刘键 1陈晓娟 1刘果果 1袁婷婷 1陈中子 1张辉 1王亮 1李诚瞻 1庞磊1
作者信息
- 1. 中国科学院微电子研究所,北京,100029
- 折叠
摘要
Abstract
8GHz 20W internally matched AIGaN/GaN HEMTs have been developed.The input and output matching net-works are realised with microstrip lines on a 0.381mm thick alumina substrate.To improve the stability factor K of the device,a lossy RC network is used at the input of the device.The developed internally matched power amplifier module exhibits 43dBm(20W)power output with a 7.3dB linear gain,38.1% PAE,and combined power efficiency of 70.6% at 8GHz.关键词
AlGaN/GaN HEMTs/内匹配/功率合成/微波功率放大器Key words
AlGaN/GaN HEMTs/internally match/power combining/power amplifier分类
信息技术与安全科学引用本文复制引用
曾轩,刘新宇,刘键,陈晓娟,刘果果,袁婷婷,陈中子,张辉,王亮,李诚瞻,庞磊..8GHz带有RC稳定网络的AIGaN/GaN HEMTs内匹配功率合成放大器的设计[J].半导体学报,2008,29(8):1445-1448,4.
