半导体学报2001，Vol.11Issue(2)：145-150,6.
分子束外延生长Al掺杂n型ZnS1-x Tex的类DX中心
DX-Like Centers in n-Type Al-Doped ZnS1-xTex Grown by Molecular Beam Epitaxy
摘要
Abstract
Al-related DX-like centers were observed in n-type Al-dopedZnS1-xTex epilayers grown by molecular beam epitaxy on GaAs substrates.The photoluminescence,capacitance-voltage,deep level transient spectroscopy,and photoconductivity spectroscopy revealed that the behavior of Al donors in ZnS1-xTex was similar to the so-called DX centers in AlxGa1-xAs.The optical ionization energies (Ei) and emission barrier (Ee) for the observed two Al-related DX-like centers were determined as Ei～1.0eV and ～2.0eV and Ee－0.21eV and 0.39eV，respectively.It was also shown that the formation of Al-related DX-like centers resulted in a significantly large lattice relaxation in ZnS1-xTex.关键词
分子束外延/宽禁带Ⅱ-Ⅵ族半导体/类DX中心分类
信息技术与安全科学引用本文复制引用
..分子束外延生长Al掺杂n型ZnS1-x Tex的类DX中心[J].半导体学报,2001,11(2):145-150,6.基金项目
国家自然科学基金和香港科技大学资助项目，合同号分别为69776014和HKUST6125/98p． （）
