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Lithography process for KrF in the sub-0.11/zm node

Zhao Yuhang Zhu Jun Tong Jiarong Zeng Xuan

半导体学报2009，Vol.30Issue(9)：146-150,5.

半导体学报2009，Vol.30Issue(9)：146-150,5.DOI:10.1088/1674-4926/30/9/096004

Lithography process for KrF in the sub-0.11/zm node

Zhao Yuhang ¹Zhu Jun ²Tong Jiarong ¹Zeng Xuan¹

作者信息

1. State Key Laboratory of ASIC & System, Department of Microelectronics, Fudan University, Shanghai 201203, China
2. Shanghai 1C Research and Development Center, Shanghai 201203, China
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摘要

Abstract

cal layers-gate poly, metal and contact.The wafer data in the process window and optical proximity will be analyzed. Based on the result, it is shown that the KrF tool is fully capable of sub 0.11μm node mass production.

关键词

kl factor/KrF photo resist/lithography

Key words

kl factor/KrF photo resist/lithography

分类

信息技术与安全科学

引用本文复制引用

Zhao Yuhang,Zhu Jun,Tong Jiarong,Zeng Xuan..Lithography process for KrF in the sub-0.11/zm node[J].半导体学报,2009,30(9):146-150,5.

基金项目

Project supported by the Foundation of Shanghai Science & Technology Committee (No. 075007033). （No. 075007033）

半导体学报

OA北大核心CSCDCSTPCDEI

ISSN：1674-4926

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