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UHF power amplifier design in 0.35μm SiGe BiCMOS

Song Jiayou Li Zhiqun Wang Zhigon

高技术通讯（英文版）2009，Vol.15Issue(2)：147-150,4.

高技术通讯（英文版）2009，Vol.15Issue(2)：147-150,4.DOI:10.3772/j.issn.1006-6748.2009.02.007

UHF power amplifier design in 0.35μm SiGe BiCMOS

Song Jiayou ¹Li Zhiqun ²Wang Zhigon¹

作者信息

1. Institute of RF-& OE-ICs,Southeast University,Nanjing 210096,P.R.China
2. School of Information Engineering,Zhengzhou University,Zhengzhou 450052,P.R.China
折叠

摘要

Abstract

A two-stage power amplifier operated at 925 MHz was designed and fabricated in Jazz's 0.35μm SiGe BiCMOS process. It was fully integrated excluding the inductors and the output matching network. Under a single 3.3V supply voltage, the off-chip bonding test results indicated that the circuit has a small signal gain of more than 24dB, the input and output reflectance are less than -24dB and -10dB, respectively, and the maximal output power is 23.5 dBm. At output power of 23.1 dBm, the PAE (power added efficiency) is 30.2%, the IMD2 and IMD3 are less than -32 dBc and -46 dBc, respectively. The chip size is 1.27mm×0.9mm.

关键词

power amplifier/SiGe/BiCMOS/heterojunction bipolar transistor

Key words

power amplifier/SiGe/BiCMOS/heterojunction bipolar transistor

分类

信息技术与安全科学

引用本文复制引用

Song Jiayou,Li Zhiqun,Wang Zhigon..UHF power amplifier design in 0.35μm SiGe BiCMOS[J].高技术通讯（英文版）,2009,15(2):147-150,4.

基金项目

Supported by the High Technology Research and Development Programme of China (2006AA03Z418). （2006AA03Z418）

高技术通讯（英文版）

OAEI

ISSN：1006-6748

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