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快速稳定的CMOS电荷泵电路的设计

曹寒梅 杨银堂 陆铁军 王宗民 蔡伟

电子器件2008,Vol.31Issue(5):1475-1478,4.
电子器件2008,Vol.31Issue(5):1475-1478,4.

快速稳定的CMOS电荷泵电路的设计

A Fast-Settling CMOS Charge Pump

曹寒梅 1杨银堂 1陆铁军 2王宗民 2蔡伟2

作者信息

  • 1. 西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安,710071
  • 2. 北京微电子技术研究所,北京,100076
  • 折叠

摘要

Abstract

A low-voltage fast-settling charge pump is proposed.In this charge pump,a cross-connected NMOS cell is used as the basic element.The settling-time is improved with the use of a diode-connected NMOS transistor which is parallel to the pump capacitor.PMOS serial switches are employed to transfer the charges from one stage to the next.According to the simulation results,the maximum output voltage of a 4-stage proposed charge pump is 7.41 V,the settling-time is 0.85 μs which is relatively smaller than its counterparts.

关键词

电荷泵/快速建立/CMOS

Key words

charge-pump/fast-settling/CMOS

分类

信息技术与安全科学

引用本文复制引用

曹寒梅,杨银堂,陆铁军,王宗民,蔡伟..快速稳定的CMOS电荷泵电路的设计[J].电子器件,2008,31(5):1475-1478,4.

基金项目

国家自然科学基金项目资助(60476046)(60876009) (60476046)

电子器件

OACSTPCD

1005-9490

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