半导体学报2001，Vol.22Issue(12)：1486-1489,4.
新颖的衬底pn结隔离型硅射频集成电感
Novel Substrate pn Junction Isolation for RF Integrated Inductors on Silicon
刘畅 1陈学良 1严金龙1
作者信息
- 1. 中国科学院上海冶金研究所微电子学分部,上海,200233
- 折叠
摘要
Abstract
A new method for reducing the substrate-rated losses of integrated spiral inductors is presented. The method is to block the eddy currents induced by spiral inductors by directly forming pn junction isolation in the Si substrate. The substrate pn junction can be realized by using the standard silicon technologies without any additional processing steps. Integrated inductors on silicon are designed and fabricated. S parameters of the inductorbased equivalent circuit are investigated and the inductor parameters are calculated. The impacts of the substrate pn junction isolation on the inductor quality factor are studied. The experimental results show that substrate pn junction isolation in certain depth has achieved a significant improvement. At 3GHz, the substrate pn unction isolation increases the inductor quality factor by 40%.关键词
硅集成电感/品质因素/涡流/pn结隔离分类
信息技术与安全科学引用本文复制引用
刘畅,陈学良,严金龙..新颖的衬底pn结隔离型硅射频集成电感[J].半导体学报,2001,22(12):1486-1489,4.
