半导体学报2007，Vol.28Issue(2)：149-153,5.
多层金属-n型4H-SiC的欧姆接触
Ohmic Contact Properties of Multi-Metal Films on n-Type 4H-SiC
摘要
Abstract
An investigation of Au/Ti/Ni and Au/Ti/Pt ohmic contacts to n-type 4H-SiC and the behavior of metal films on SiC with thermal anneals is reported. Specific contact resistance as low as 2. 765 × 10-6Ω·cm2 was achieved after rapid thermal annealing in N2 for 2min at 950 ℃. SIMS analysis shows that the formation of Ni silicide after annealing supported a number of carbon atoms' outdiffusion from the SiC to form interstitial compound TiC. This process can create abundant C vacancies near the interface. It is the carbon defect layer that enhances the defect-assisted tunneling. The interface band structure within the defect level could make it clear why the metal-SiC contacts become ohmic during annealing.关键词
碳化硅/欧姆接触/碳空位/界面能带结构Key words
silicon carbide/ohmic contact/carbon vacancy/interface band structure分类
电子信息工程引用本文复制引用
韩茹,杨银堂,王平,崔占东,李亮..多层金属-n型4H-SiC的欧姆接触[J].半导体学报,2007,28(2):149-153,5.基金项目
教育部重点科技项目(批准号:02074)和国家部委预研计划(批准号:41308060105)资助项目 Project supported by the Program of the Ministry of Education of China (No. 02074) and the Pre-Research Foundation from the National Ministries and Commissions (No.41308060105) （批准号:02074）
