电子器件2008，Vol.31Issue(5)：1495-1500,6.
双应变SiGe/Si异质结CMOS的设计及其电学特性的Medici模拟
Design of Dual-Strained SiGe/Si Heterojunction CMOS and Its Medici Simulation of Electrical Characteristics
摘要
Abstract
An integration of 0.125 μm dual-strained SiGe/Si heterojunction CMOSFET (HCMOSFET) structure is presented in this paper. Compressive strained SiGe and tensile strained Si are used as channel material for heterojunction PMOSFET (HPMOS) and heterojunction NMOSFET (HNMOS) respectively,HPMOS and HNMOS are vertically stacked in this structure; the parameters of mobility models of electrons and holes in strained SiGe and strained Si are modified for exact simulation; DC and AC electrical characteristics of this device and its input-output characteristics are finally simulated and analyzed by simulator Medici.The simulation results indicate that this device exhibits significant enhancements in these electrical characteristics, correct logic function and shorter delay time than bulk Si CMOS. Simultaneously, almost 50% layout area in packing density can be saved in comparison with that of bulk Si CMOS.关键词
异质结/CMOSFET应变硅锗/应变硅/Medici模拟Key words
heterojunction CMOSFET/strained SiGe/strained Si/Medici simulation分类
信息技术与安全科学引用本文复制引用
舒斌,张鹤鸣,马晓华,宣荣喜..双应变SiGe/Si异质结CMOS的设计及其电学特性的Medici模拟[J].电子器件,2008,31(5):1495-1500,6.基金项目
武器装备预研基金项目(51408061104DZ01) （51408061104DZ01）
