半导体学报2007，Vol.28Issue(10)：1508-1512,5.
用纳米棒ZnO作模板生长无支撑的AlN纳米晶
Growth of Free-Standing AlN Nanocrystals on Nanorod ZnO Template
摘要
Abstract
AlN film is deposited on a nanorod ZnO template by metalorganic chemical vapor deposition. Scanning electron microscopy measurements reveal that this film forms a lying nanorod surface. The grazing incidence Xray diffraction further proves that it is entirely a wurtziteAlN structure, and the average size of the crystallite grains is about 12nm,which is near the ZnO nanorod diameter (30nm). This means that the nanorod ZnO template can restrict the AlN lateral overgrowth. Additionally, by etching the ZnO template with H2 at high temperatures,we directly achieve epitaxial lift-off during the growth process. Eventually,free-standing AlN nanocrystals are achieved,and the undamaged area is near 1cm × 1cm. We define the growth mechanism as a "grow-etchmerge" process.关键词
金属有机物气相外延/纳米材料/氮化物Key words
metalorganic vapor phase epitaxy/ nanomaterials/ nitride分类
数理科学引用本文复制引用
胡卫国,魏鸿源,焦春美,康亭亭,张日清,刘祥林..用纳米棒ZnO作模板生长无支撑的AlN纳米晶[J].半导体学报,2007,28(10):1508-1512,5.基金项目
Project supported by the National Natural Science Foundation of China (No. 60506002) 国家自然科学基金资助项目(批准号:60506002) （No. 60506002）
