半导体学报2008，Vol.29Issue(8)：1517-1522,6.
一种无电阻高电源抑制比的CMOS带隙基准源
A High-PSRR CMOS Bandgap Reference Without Resistor
周前能 1王永生 1喻明艳 1叶以正 1李红娟2
作者信息
- 1. 哈尔滨工业大学微电子中心,哈尔滨,150001
- 2. 吉林化工学院信控学院,吉林,132022
- 折叠
摘要
Abstract
A CMOS bandgap reference (BGR) without a resistor,with a high power supply rejection ratio and output be-low 1V is proposed.The circuit is suited for on-chip voltage down converters.The BGR is designed and fabricated using an HJTC 0.18μm CMOS process.The silicon area is only 0.031mm2 excluding pads and electrostatic-discharge (ESD) protec-tion circuits.Experimental results show that the PSRR of the proposed BGR at 100Hz and 1kHz achieves,respectively,-70 and -62dB using the pre-regulator.The proposed BGR circuit generates an output voltage of 0.5582V with a varia-tion of 1.5mV in a temperature range from 0 to 85℃.The deviation of the output voltage is within 2mV when the power supply voltage VDD changes from 2.4 to 4V.关键词
CMOS带隙基准/电流源/电源抑制比/预调整器Key words
CMOS bandgap reference/current source circuit/PSRR/pre-regulator分类
电子信息工程引用本文复制引用
周前能,王永生,喻明艳,叶以正,李红娟..一种无电阻高电源抑制比的CMOS带隙基准源[J].半导体学报,2008,29(8):1517-1522,6.
