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Optical and electrical properties of N-doped ZnO and fabrication of thin-film transistors

Zhu Xiaming Wu Huizhen Wang Shuangjiang Zhang Yingying Cai Chunfeng Si Jianxiao Yuan Zijian Du Xiaoyang Dong Shurong

半导体学报2009，Vol.30Issue(3)：15-18,4.
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半导体学报2009，Vol.30Issue(3)：15-18,4.DOI:10.1088/1674-4926/30/3/033001

Optical and electrical properties of N-doped ZnO and fabrication of thin-film transistors

Optical and electrical properties of N-doped ZnO and fabrication of thin-film transistors

Zhu Xiaming 1Wu Huizhen 1Wang Shuangjiang 2Zhang Yingying 1Cai Chunfeng 1Si Jianxiao 1Yuan Zijian 1Du Xiaoyang 1Dong Shurong3

作者信息

  • 1. Department of Physics, Zhejiang University, Hangzhou 310027, China
  • 2. State Key Laboratory of Modern Optical Instrumentations, Zhefiang University, Hangzhou 310027, China
  • 3. ESD Laboratory, Institute of Microelectronics and Photoelectronics, Zhefiang University, Hang Zhou 310027, China
  • 折叠

摘要

Abstract

Using NH3 as nitrogen source gas, N-doped ZnO (ZnO:N) thin films in c-axis orientation were deposited on glass substrates by radio frequency magnetron sputtering at room temperature. The ZnO:N thin films display significant increase of resistivity and decrease of photoluminescence intensity. As-grown ZnO:N material was used as active channel layer and Si3N4 was used as gate insulator to fabricate thin-film transistor. The fabricated devices on glasses demonstrate typical field effect transistor characteristics.

关键词

ZnO/N-doping/resistivity/photoluminescence/thin film transistors

Key words

ZnO/N-doping/resistivity/photoluminescence/thin film transistors

分类

信息技术与安全科学

引用本文复制引用

Zhu Xiaming,Wu Huizhen,Wang Shuangjiang,Zhang Yingying,Cai Chunfeng,Si Jianxiao,Yuan Zijian,Du Xiaoyang,Dong Shurong..Optical and electrical properties of N-doped ZnO and fabrication of thin-film transistors[J].半导体学报,2009,30(3):15-18,4.

基金项目

Project supported by the National Natural Science Foundation of China (No. 60676003) and the Natural Science Foundation of Zhejiang Province (No. Z406092). （No. 60676003）

半导体学报

OA北大核心CSCDCSTPCDEI

1674-4926

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