Optical and electrical properties of N-doped ZnO and fabrication of thin-film transistorsOA北大核心CSCDCSTPCD
Optical and electrical properties of N-doped ZnO and fabrication of thin-film transistors
Using NH3 as nitrogen source gas, N-doped ZnO (ZnO:N) thin films in c-axis orientation were deposited on glass substrates by radio frequency magnetron sputtering at room temperature. The ZnO:N thin films display significant i…查看全部>>
Using NH3 as nitrogen source gas, N-doped ZnO (ZnO:N) thin films in c-axis orientation were deposited on glass substrates by radio frequency magnetron sputtering at room temperature. The ZnO:N thin films display significant increase of resistivity and decrease of photoluminescence intensity. As-grown ZnO:N material was used as active channel layer and Si3N4 was used as gate insulator to fabricate thin-film transistor. The fabricated devices on glasses demons…查看全部>>
Zhu Xiaming;Wu Huizhen;Wang Shuangjiang;Zhang Yingying;Cai Chunfeng;Si Jianxiao;Yuan Zijian;Du Xiaoyang;Dong Shurong
Department of Physics, Zhejiang University, Hangzhou 310027, ChinaDepartment of Physics, Zhejiang University, Hangzhou 310027, ChinaState Key Laboratory of Modern Optical Instrumentations, Zhefiang University, Hangzhou 310027, ChinaDepartment of Physics, Zhejiang University, Hangzhou 310027, ChinaDepartment of Physics, Zhejiang University, Hangzhou 310027, ChinaDepartment of Physics, Zhejiang University, Hangzhou 310027, ChinaDepartment of Physics, Zhejiang University, Hangzhou 310027, ChinaDepartment of Physics, Zhejiang University, Hangzhou 310027, ChinaESD Laboratory, Institute of Microelectronics and Photoelectronics, Zhefiang University, Hang Zhou 310027, China
电子信息工程
ZnON-dopingresistivityphotoluminescencethin film transistors
ZnON-dopingresistivityphotoluminescencethin film transistors
《半导体学报》 2009 (3)
高迁移率ZnO基透明薄膜晶体管研究
15-18,4
Project supported by the National Natural Science Foundation of China (No. 60676003) and the Natural Science Foundation of Zhejiang Province (No. Z406092).
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