半导体学报2004，Vol.25Issue(2)：152-157,6.
在Vg=Vd/2应力模式下2.5nm氧化层pMOSFETs的新寿命预测模型
A New Lifetime Prediction Model for pMOSFETs Under Vg=Vd/2 Mode with 2.5nm Oxide
摘要
Abstract
Gate current for pMOSFETs is composed of direct tunneling current,channel hot hole,electron injection current,and highly energetic hot holes by secondary impact ionization.The device degradation under Vg=Vd/2 is mainly caused by the injection of hot electrons by primary impact ionization and hot holes by secondary impact ionization,and the device lifetime is assumed to be inversely proportional to the hot holes,which is able to surmount Si-SiO2 barrier and be injected into the gate oxide.A new lifetime prediction model is proposed on the basis and validated to agree well with the experiment.关键词
热载流子/复合/电子注入/二次碰撞电离Key words
hot carriers/recombination/electron injection/secondary impact ionization分类
信息技术与安全科学引用本文复制引用
胡靖,赵要,许铭真,谭长华..在Vg=Vd/2应力模式下2.5nm氧化层pMOSFETs的新寿命预测模型[J].半导体学报,2004,25(2):152-157,6.基金项目
国家重点基础研究发展计划(No.G2000036503)及Motorola Digital DNA Laboratory资助项目 （No.G2000036503）
