半导体学报2007，Vol.28Issue(10)：1527-1531,5.
非均匀条间距结构功率SiGe HBT
Multi-Finger Power SiGe HBT with Non-Uniform Finger Spacing
摘要
Abstract
A multi-finger power SiGe heterojunction bipolar transistor (HBT) with non-uniform finger spacing was fabricated to improve thermal stability. Experimental results show that the peak temperature is reduced by 22K compared with that of an HBT with uniform finger spacing in the same operating conditions. The temperature profile across the device can be improved at different biases for the same HBT with non-uniform finger spacing. Because of the decrease in peak temperature and the improvement of temperature profile, the power SiGe HBT with non-uniform spacing can operate at higher bias and hence has higher power handling capability.关键词
SiGe/异质结双极晶体管/功率Key words
SiGe/ HBT/ power分类
电子信息工程引用本文复制引用
金冬月,张万荣,沈珮,谢红云,王扬..非均匀条间距结构功率SiGe HBT[J].半导体学报,2007,28(10):1527-1531,5.基金项目
Project supported by the National Natural Science Foundation of China (Nos.60776051,60376033) ,the Beijing Municipal Education Committee (No.KM200710005015),the Beijing Municipal Trans-Century Talent Project (No.67002013200301),the National Key Laboratory for Analog Integrated Circuits of China (Nos.514390108,04QT0101) ,the Beijing Municipal Natural Science Foundation,and the Funding Project for Academic Human Resources Development in Institutions of Higher Learning Under the Jurisdiction of Beijing Municipality 国家自然科学基金(批准号:60770651,60376033),北京市教委科技发展计划(批准号:KM200710005015),北京市优秀跨世纪人才基金(批准号:67002013200301),模拟集成电路国家重点实验室基金(批准号:514390108,04QT0101),北京市自然科学基金以及北京市属市管高等学校人才强教计划资助项目 （Nos.60776051,60376033）
