西安电子科技大学学报（自然科学版）2001，Vol.28Issue(2)：154-157,4.
6H-SiC反型层电子库仑散射
Study of coulomb scattering in 6H-SiC inversion layers
尚也淳 1张义门 1张玉明1
作者信息
- 1. 西安电子科技大学 微电子所，陕西 西安 710071
- 折叠
摘要
Abstract
A comprehensive analytical model for coulomb scattering in 6H-SiCinversion layers is presented considering all the coulomb effects of the charged-centers near the SiC/SiO2 interface. This model takes into account the effects of the charged-centers correlation. The electron mobility in 6H-SiC inversion layers has been studied by the single-particle Monte Carlo technique. The simulation results agree with the experimental data very well. The study shows that coulomb scattering becomes more important at low transverse-electric field and both the density and the distribution of charged-cneters play an important role in electron transport in SiC inversion layers.关键词
6H-SiC/反型层迁移率/库仑散射/Monte Carlo模拟分类
信息技术与安全科学引用本文复制引用
尚也淳,张义门,张玉明..6H-SiC反型层电子库仑散射[J].西安电子科技大学学报（自然科学版）,2001,28(2):154-157,4.
