半导体学报2007，Vol.28Issue(2)：154-158,5.
基极微空气桥和发射极空气桥的InP/InGaAs HBT
InP/InGaAs Heterojunction Bipolar Transistor with Base μ-Bridge and Emitter Air-Bridge
摘要
Abstract
An InP-based single-heterojunction bipolar transistor (SHBT) with base μ-bridge and emitter air-bridge is reported. Because those bridges reduce parasitic capacitance greatly, the cutoff frequency fT of the 2 μm ×12.5 μm InP SHBT without de-embedding reaches 178GHz. It is critical in high-speed low power applications,such as OEIC receivers and analog-to-digital converters.关键词
InP/异质结双极型晶体管/微空气桥/空气桥/自对准Key words
InP/HBT/μ-bridge/air-bridge/self-aligning分类
信息技术与安全科学引用本文复制引用
于进勇,刘新宇,苏树兵,王润梅,徐安怀,齐鸣..基极微空气桥和发射极空气桥的InP/InGaAs HBT[J].半导体学报,2007,28(2):154-158,5.基金项目
国家重点基础研究发展规划(批准号:2002CB311903)及中国科学院创新基金(批准号:KGCX2-107)资助项目 Project supported by the State Key Development Program for Basic Research of China (No. 2002CB311903) and the Innovation Program of the Chinese Academy of Sciences (No. KGCX2-107) （批准号:2002CB311903）
