半导体学报2006，Vol.27Issue(9)：1548-1551,4.
CMOS有源像素传感器特性分析与优化设计
Design, Analysis, and Optimization of a CMOS Active Pixel Sensor
摘要
Abstract
A three-transistor active pixel sensor and its double sampling readout circuit implemented by a switch capacitor amplifier are designed. The circuit is embedded in a 64 × 64 pixel array CMOS image sensor and success fully taped out with a Chartered 0.35μm process. The pixel pitch is 8μm × 8μm with a fill factor of 57% ,the photo-sensitivity is 0.8V/(lux · s) ,and the dynamic range is 50dB. Theoretical analysis and test results indicate that as the process is scaled down, a smaller pixel pitch reduces the sensitivity. A deep junction n-well/p-substrate photodiode with a reasonable fill factor and high sensitivity are more appropriate for submicron processes.关键词
CMOS图像传感器/有源像素/填充因子/光响应灵敏度Key words
CMOS image sensor/active pixel sensor/fill factor/photo-response sensitivity分类
信息技术与安全科学引用本文复制引用
徐江涛,姚素英,李斌桥,史再峰,高静..CMOS有源像素传感器特性分析与优化设计[J].半导体学报,2006,27(9):1548-1551,4.基金项目
国家自然科学基金(批准号:60576025)及天津市重大科技攻关计划(批准号:033183911)资助项目 Project supported by the National Natural Science Foundation of China(No. 60576025) and the Key Technologies R&D Program of Tianjin (No. 033183911) （批准号:60576025）
