半导体学报2004，Vol.25Issue(12)：1561-1566,6.
4H-SiC埋沟MOSFET的研制
Fabrication of 4H-SiC Buried-Channel nMOSFETs
郜锦侠 1张义门 1张玉明1
作者信息
- 1. 西安电子科技大学微电子研究所,西安,710071
- 折叠
摘要
Abstract
The buried channel (BC) nMOSFETs with gate oxide grown thermally on 4H-SiC are fabricated.The BC region and source/drain region are formed by nitrogen implantation at room temperature followed by annealing at 1600℃.The channel depth is about 0.2μm.The peak field-effect mobility of 18.1cm2/(V·s) for 5μm device is achieved.Thickly dotted pits found in the surface through microscope may be one of the important factors of the cause low field-effect mobility.The threshold voltages are 1.73V and 1.72V for the gate lengths of 3μm and 5μm respectively.The transconductance at V G=20V and V D=10V is 102μS for the gate length of 3μm.关键词
4H-SiC/埋沟/MOSFET/场效应迁移率Key words
4H-SiC/buried-channel/MOSFET/field-effect mobility分类
信息技术与安全科学引用本文复制引用
郜锦侠,张义门,张玉明..4H-SiC埋沟MOSFET的研制[J].半导体学报,2004,25(12):1561-1566,6.
