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透射式GaAs(Cs,O)光电阴极稳定性的研究

闫金良 朱长纯 向世明

红外与毫米波学报2001,Vol.20Issue(2):157-160,4.
红外与毫米波学报2001,Vol.20Issue(2):157-160,4.

透射式GaAs(Cs,O)光电阴极稳定性的研究

STABILITY OF TRANSMISSION MODE GaAs(Cs,O) PHOTOCATHODES

闫金良 1朱长纯 1向世明2

作者信息

  • 1. 西安交通大学电信学院电子工程系,
  • 2. 西安应用光学研究所,
  • 折叠

摘要

Abstract

The influence of illumination intensity and residual gases on the stability of negative electron affinity GaAs(Cs,O) photocathodes during operation was investigated in the present work. A comparison was made between the stability of photocathodes installed in activation chamber and tube body. Studies of the activated GaAs photocathode surface and the surface of GaAs photocathode with sensitivity decaying to zero were made using Auger electron spectroscopy. It was found that the degradation of GaAs photocathodes stems maingly from the interaction of harmful residual gases and photocathode surface.

关键词

光电发射/像增强器/负电子亲和势/残余气体/稳定性

分类

信息技术与安全科学

引用本文复制引用

闫金良,朱长纯,向世明..透射式GaAs(Cs,O)光电阴极稳定性的研究[J].红外与毫米波学报,2001,20(2):157-160,4.

基金项目

国防科技重点基金(2.2.3.1)和中国博士后科学基金(中博基[1999]17号)资助项目 (2.2.3.1)

红外与毫米波学报

OA北大核心CSCDSCI

1001-9014

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