半导体学报2004，Vol.25Issue(12)：1576-1579,4.
SiGe共振腔增强型探测器的制备
Fabrication of SiGe/Si Multi-Quantum Wells Resonant-Cavity-Enhanced Detector
摘要
Abstract
A SiGe/Si multi-quantum wells resonant-cavity-enhanced(RCE) detector with high reflectivity bottom mirror is fabricated by a new method.The bottom mirror is deposited in the hole,which is etched from the backside of the sample by ethylenediamine-pyrocatechol-water(EPW) solution with the buried SiO2 layer in SOI substrate as the etching-stop layer.Reflectivity spectrum indicates that the mirror deposited in the hole has a reflectivity as high as 99% in the range of 1.2～1.5μm.The peak responsivity of the RCE detector at 1.344μm is 1.2mA/W and the full width at half maximum is 12nm.Compared with the conventional p-i-n photodetector,the responsivity of RCE detector is enhanced 8 times.关键词
RCE/探测器/SOI/SiGeKey words
RCE/detector/SOI/SiGe分类
信息技术与安全科学引用本文复制引用
李传波,毛荣伟,左玉华,成步文,时文华,赵雷,罗丽萍,余金中,王启明..SiGe共振腔增强型探测器的制备[J].半导体学报,2004,25(12):1576-1579,4.基金项目
国家重点基础研究发展规划(批准号:G2000036603),国家高技术研究发展计划(批准号:2002AA312010)和国家自然科学基金(批准号:90104003,60336010)资助项目 （批准号:G2000036603）
