半导体学报2004，Vol.25Issue(12)：1580-1585,6.
新型图形化SOI LDMOS结构的性能分析
A Novel LDMOS Structure in Thin Film Patterned-SOI Technology with a Silicon Window Beneath p Well
摘要
Abstract
A novel patterned-SOI LDMOS structure with a silicon window beneath the p well is proposed.The performance is simulated numerically.In comparison to SOI counterpart,the off-state and the on-state breakdown voltage can increase by 57% and 70% respectively;transconductance is flatter; I-V curves take no sign of kink in the saturation region;the device temperature is much lower even at high input power;the floating body effect and the self-heating effect are distinctly suppressed.Furthermore,the advantage of low leakage current and low output capacitance in SOI structures does not degrade.The proposed structure will be a promising choice to improve the performance and reliability of SOI power device.关键词
图形化SOI/LDMOS/浮体效应/自加热效应Key words
patterned-SOI/LDMOS/floating body effect/self-heating effect分类
信息技术与安全科学引用本文复制引用
程新红,杨文伟,宋朝瑞,俞跃辉,沈达升..新型图形化SOI LDMOS结构的性能分析[J].半导体学报,2004,25(12):1580-1585,6.基金项目
美国国家科学基金国际合作资助项目(No.INT-0004547) （No.INT-0004547）
