半导体学报2004，Vol.25Issue(12)：1599-1605,7.
GCS法及多晶区量子效应的集约建模
Gate-Capacitance-Shift Approach and Compact Modeling for Quantum Mechanical Effects in Poly-Gates
摘要
Abstract
A new approach,gate-capacitance-shift (GCS) approach,is described for compact modeling.This approach is piecewise for various physical effects and comprises the gate-bias-dependent nature of corrections in the nanoscale regime.Additionally,an approximate-analytical solution to the quantum mechanical (QM) effects in polysilicon (poly)-gates is obtained based on the density gradient model.It is then combined with the GCS approach to develop a compact model for these effects.The model results tally well with numerical simulation.Both the model results and simulation results indicate that the QM effects in poly-gates of nanoscale MOSFETs are non-negligible and have an opposite influence on the device characteristics as the poly-depletion (PD) effects do.关键词
集约模型/纳米级/栅电容修正法/多晶区内的量子力学效应Key words
compact model/nanoscale regime/GCS approach/QM effects in poly-gates分类
信息技术与安全科学引用本文复制引用
张大伟,章浩,田立林,余志平..GCS法及多晶区量子效应的集约建模[J].半导体学报,2004,25(12):1599-1605,7.基金项目
国家高技术研究发展计划资助项目(批准号:2003AA1Z1370) （批准号:2003AA1Z1370）
