中国电子科技2009，Vol.7Issue(2)：160-164,5.
Radio Frequency Low Noise Amplifier with Linearizing Bias Circuit
Radio Frequency Low Noise Amplifier with Linearizing Bias Circuit
Wen-Tao Han 1Qi Yu 1Song Ye 2Mo-Hua Yang1
作者信息
- 1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
- 2. BroadGalaxy Electronics Technology Ltd., Chengdu, 610065, China
- 折叠
摘要
Abstract
A 1.34 GHz±60 MHz low noise amplifier (LNA) designed in a 0.35 μm SiGe process is presented. The designed LNA exhibits a power gain of 21.46 dB and a noise figure (NF) of 1.27 dB at 1.34 GHz. The linearity is improved with an active biasing technique. The post-layout simulation shows an input referred 1-dB compression point (IP1dB) of (11.52 dBm. Compared with the recent reported high gain LNAs, the proposed LNA has a much better linearity without degrading other performance. The LNA draws 10 mA current from a 3.3 V power supply.关键词
Impedance matching, linear circuits, low noise amplifier.Key words
Impedance matching, linear circuits, low noise amplifier.分类
信息技术与安全科学引用本文复制引用
Wen-Tao Han,Qi Yu,Song Ye,Mo-Hua Yang..Radio Frequency Low Noise Amplifier with Linearizing Bias Circuit[J].中国电子科技,2009,7(2):160-164,5.
