中国电子科技2005，Vol.3Issue(2)：161-163,3.
Study of the Thin Film Pulse Transformer
Study of the Thin Film Pulse Transformer
LIU Bao-yuan 1SHI Yu 1WEN Qi-ye1
作者信息
- 1. School of Microelectronic and Solid-state Electronic, University of Electronic Science and Technology of China Chengdu 610054 China
- 折叠
摘要
Abstract
A new thin film pulse transformer for using in ISND and model systems is fabricated by a mask sputtering process. This novel pulse transformer consists of four I-shaped CoZrRe nanometer crystal magnetic-film cores and a Cu thin film coil, deposited on the micro-crystal glass substrate directly. The thickness of thin film core is between 1 and 3 μm, and the area is between 4mm×6 mm and 12mm×6 mm. The coils provide a relatively high induce of 0.8 μm and can be well operated in a frequency range of 0.001~20 MHz.关键词
thin films transformer/pulse transformer/sputtering process/magnetic filmKey words
thin films transformer/pulse transformer/sputtering process/magnetic film分类
信息技术与安全科学引用本文复制引用
LIU Bao-yuan,SHI Yu,WEN Qi-ye..Study of the Thin Film Pulse Transformer[J].中国电子科技,2005,3(2):161-163,3.
