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Fabrication of strained Ge film using a thin SiGe virtual substrate

Guo Lei Zhao Shuo Wang Jing Liu Zhihong Xu Jun

半导体学报2009，Vol.30Issue(9)：16-20,5.

半导体学报2009，Vol.30Issue(9)：16-20,5.DOI:10.1088/1674-4926/30/9/093005

Fabrication of strained Ge film using a thin SiGe virtual substrate

Guo Lei ¹Zhao Shuo ¹Wang Jing ¹Liu Zhihong ¹Xu Jun¹

作者信息

1. Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University,Beijing 100084, China
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摘要

Abstract

epitaxial layer thickness is less than 150 nm. Due to the low growth temperature, the two-dimensional layer-by-layer growth mode dominates during the epitaxial process, which is a key factor for the growth of high quality strained Ge films.

关键词

strained Ge/SiGe virtual substrate/RPCVD/UHVCVD

Key words

strained Ge/SiGe virtual substrate/RPCVD/UHVCVD

分类

信息技术与安全科学

引用本文复制引用

Guo Lei,Zhao Shuo,Wang Jing,Liu Zhihong,Xu Jun..Fabrication of strained Ge film using a thin SiGe virtual substrate[J].半导体学报,2009,30(9):16-20,5.

基金项目

Project supported by the National Natural Science Foundation of China (Nos. 60636010, 60820106001). （Nos. 60636010, 60820106001）

半导体学报

OA北大核心CSCDCSTPCDEI

ISSN：1674-4926

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