半导体学报2005，Vol.26Issue(1)：16-21,6.
用深反应离子刻蚀和介质填充技术制造具有高深宽比的超深电隔离槽
Fabrication of Ultra Deep Electrical Isolation Trenches with High Aspect Ratio Using DRIE and Dielectric Refill
朱泳 1闫桂珍 1王成伟 1杨振川 1范杰 1周健 1王阳元1
作者信息
- 1. 北京大学微电子学研究所,微米/纳米加工技术国家重点实验室,北京,100871
- 折叠
摘要
Abstract
A novel technique to fabricate ultra deep high aspect ratio electrical isolation trenches with DRIE and dielectric refill is presented.The relationship between trench profile and DRIE parameters is discussed.By optimizing DRIE parameters and RIE etching the trenches' opening,the ideal trench profile is obtained to ensure that the trenches are fully refilled without voids.The electrical isolation trenches are 5μm wide and 92μm deep with 0.5μm thick oxide layers on the sidewall as isolation material.The measured I-V result shows that the trench structure has good electrical isolation performance:the average resistance in the range of 0～100V is more than 1011Ω and no breakdown appears under 100V.This isolation trench structure has been used in fabrication of the bulk integrated micromachined gyroscope,which shows high performance.关键词
深反应离子刻蚀/电隔离槽/体微结构/单片集成Key words
deep reactive ion etching/electrical isolation trenches/bulk microstructures/monolithic integration分类
信息技术与安全科学引用本文复制引用
朱泳,闫桂珍,王成伟,杨振川,范杰,周健,王阳元..用深反应离子刻蚀和介质填充技术制造具有高深宽比的超深电隔离槽[J].半导体学报,2005,26(1):16-21,6.
