中国电子科技2006，Vol.4Issue(2)：165-168,4.
Preparation and Photoelectric Conversion Mechanism of Semiconducting ITO/Cu2O Electrodes
Preparation and Photoelectric Conversion Mechanism of Semiconducting ITO/Cu2O Electrodes
WANG Hua 1HE Wei 1WANG Hui-xiu 1WANG Shou-xu1
作者信息
- 1. School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China Chengdu 610054 China
- 折叠
摘要
Abstract
Semiconducting cuprous oxide films were electrodeposited onto conducting glasses coated with Indium Tin Oxide (ITO) using potentiostatic method. The electrodes were examined by means of X-Ray Diffraction (XRD) and X-ray Photoelectron Spectrum (XPS). The results indicate that the prepared films are cubic Cu2O crystals, and annealing enhances the size and preferred orientation of the films. The photoelectric conversion mechanism of semiconducting ITO/Cu2O electrodes in 0.1 mol/L potassium sulfate (K2SO4) solution is further discussed by using Linear Sweep Voltammetry (LSV) method. The differences of photoelectric conversion of electrodes are reasonably deduced and proved through surfactant modifying, annealing or not, respectively.关键词
photoelectric conversion mechanism/semiconducting electrode/annealing/linear sweep voltammetryKey words
photoelectric conversion mechanism/semiconducting electrode/annealing/linear sweep voltammetry分类
信息技术与安全科学引用本文复制引用
WANG Hua,HE Wei,WANG Hui-xiu,WANG Shou-xu..Preparation and Photoelectric Conversion Mechanism of Semiconducting ITO/Cu2O Electrodes[J].中国电子科技,2006,4(2):165-168,4.
