半导体学报2008，Vol.29Issue(9)：1661-1665,5.
日盲探测器高Al组分n-Al0.6Ga0.4N欧姆接触
Ohmic Contacts to n-Type Al0.6Ga0.4N for Solar-Blind Detectors
朱雁翎 1杜江锋 1罗木昌 2赵红 2赵文伯 2黄烈云 2姬洪 1于奇 1杨谟华1
作者信息
- 1. 电子科技大学电子薄膜与集成器件国家重点实验室,成都,610054
- 2. 重庆光电技术研究所,重庆,400060
- 折叠
摘要
Abstract
We investigate the contact characteristics of bi-layer thin films, Ti(20nm)/Al(200nm) on Si-doped n-type Al0.6Ga0.4 N films grown on sapphire substrate. The surface treatment was aqua regia boiling before metallization and annealing after metallization at different conditions in N2 ambient. High resolution X-ray diffractometery analysis was carried out on the contacts and the surface interfaces of these conditions were compared. A specific contact resistivity ρc was determined using the circular transmission line method via current-voltage measurements. A ρc of 3.42×10-4 Ω·cm2 was achieved when annealed at 670℃ for 90s. Then, this ideal ohmic contact was used in back-illuminated solar-blind AlGaN p-i-n detectors and the detectors' performances, such as spectral responsivity, dark-current, and breakdown voltage were optimized.关键词
高铝n-AlGaN/欧姆接触/退火/背光照/pin日盲探测器Key words
high-Al content n-AlGaN/ohmic contact/anneal/back-illumination/solar-blind p-i-n detector分类
数理科学引用本文复制引用
朱雁翎,杜江锋,罗木昌,赵红,赵文伯,黄烈云,姬洪,于奇,杨谟华..日盲探测器高Al组分n-Al0.6Ga0.4N欧姆接触[J].半导体学报,2008,29(9):1661-1665,5.
