半导体学报2001，Vol.11Issue(2)：166-170,5.
MOCVD生长的InGaN合金的性质
Properties of InGaN Layers Grown on Sapphire Substrates by MOCVD
摘要
Abstract
InGaN films of various compositions grown by MOCVD using PL, Halland SEM techniques have been analysed. When the Ⅴ/Ⅲ ratio is equal to 5000, the temperature of 750℃ is suitable for the growth of InGaN samples. Under these specific conditions, the electron concentration is about 2.21×1018cm-3 and In content about 11.54%. The wavelength of the near band-gap edge peak is 394nm at 295K and its full width of half maximum (FWHM) is about 116meV. According to the relations between the wavelength and the intensity of the near-band-gap-edge peak，at the growth temperature of 750℃,it can be obtained the temperature coefficient α(dE/dT) of the InGaN sample is 0.56×10-3eV/K and the binding energy of the near-band-gap-edge peak is 32.4 meV.At higher growth temperatures (800℃ and 900℃) ，the In content and the PL intensity of InGaN sample will decrease. And the meatl particles of In can be observed on the surface of the sample.关键词
MOCVD/InGaN/光致发光(PL)/扫描电镜(SEM)分类
信息技术与安全科学引用本文复制引用
闫华,卢励吾,王占国..MOCVD生长的InGaN合金的性质[J].半导体学报,2001,11(2):166-170,5.基金项目
国家自然科学重点基金资助项目(No.69789601)． （No.69789601）
