半导体学报2007，Vol.28Issue(11)：1674-1678,5.
fmax为30.8GHz的超薄Al2O3绝缘栅GaN MOS-HEMT器件
GaN MOS-HEMT Using Ultrathin Al2O3 Dielectric with fmax of 30.8GHz
摘要
Abstract
We report on a GaN metal-oxide-semiconductor high electron mobility transistor(MOS-HEMT)using atomic-layer deposited(ALD)Al2O3 as the gate dielectric.Through decreasing the thickness of the gate oxide to 3.5nm,a device with maximum transconductance of 130mS/mm is produced.The drain current of this 1μm gatelength MOS-HEMT can reach 720mA/mm at+3.0V gate bias.The unity current gain cutoff frequency and maximum frequency of oscillation are obtained as 10.1 and 30.8GHz,respectively.关键词
AlGaN/GaN/MOS-HEMT/超薄Al2O3Key words
AlGaN/GaN/MOS-HEMT/ultrathin Al2O3分类
信息技术与安全科学引用本文复制引用
郝跃,岳远征,冯倩,张进城,马晓华,倪金玉..fmax为30.8GHz的超薄Al2O3绝缘栅GaN MOS-HEMT器件[J].半导体学报,2007,28(11):1674-1678,5.基金项目
Project supported by the State Key Development Program for Basic Research of China(No.51327020301) 国家重点基础研究发展计划资助项目(批准号:51327020301) （No.51327020301）
