硅酸盐学报2001，Vol.29Issue(2)：168-171,4.
钛宝石晶体中的位错以及退火对位错的影响
DISLOCATION LINES IN DOPED-Ti SAPPHIRE CRYSTAL AND THE EFFECT OF ANNEALING
摘要
Abstract
The dislocation lines in doped-Ti sapphire crystal and the effect of annealing on them are reported in this paper. By the aid of chemical etching method, the outcrops of dislocation lines are revealed in (0001) surface of doped-Ti sapphire crystal (Ti3+: Al2O3). The density distributions of dislocation lines were measured along with three corresponding radial lines in (0001) surface of the sample before and after annealing. Taking advantage of the forming thcory of dislocation etch-pit, three types of dislocation lines in as-grown crystal can be indicated, i.e. b = 1/3<1120>,1/3<1101> and <1010>. The annealing on crystal of long time in high temperature H2 atmosphere has effect on the first type of the dislocation line, but nearly no effect on other types of the dislocation lines. Therefore, the annealing on crystal hardly reduces the total density of the dislocation lines. During shoulder to equal radius growth, the densities of the dislocation lines at the center of crystal boule decrease from high to low along growth direction. During the following equal radius growth of crystal, the densities of the dislocation lines along radial direction of boule increase all through from low to high. This reveals the growth interface reversing fron concave to convex.关键词
位错/腐蚀坑密度/退火/激光晶体/钛宝石晶体分类
化学化工引用本文复制引用
曾贵平,殷绍唐,秦青海,葛玉香..钛宝石晶体中的位错以及退火对位错的影响[J].硅酸盐学报,2001,29(2):168-171,4.基金项目
国家自然科学基金资助项目(59832080). （59832080）
