半导体学报2008，Vol.29Issue(9)：1682-1685,4.
增强型AlGaN/GaN槽栅HEMT
An Enhancement-Mode AlGaN/GaN HEMT with Recessed-Gate
摘要
Abstract
Fabrication of enhancement-mode high electron mobility transistors on AlGaN/GaN heterostructures grown on sapphire substrates is reported. These devices with 1.2μm gate-length,4mm space between source and drain,and 15nm recessed-gate depth exhibit a maximum drain current of 332mA/mm at 3V,a maximum transconductance of 221mS/mm,a threshold voltage of 0. 57V, ft of 5.2GHz, and fmax of 9.3GHz. A dielectric layer formed unintentionally during recessedgate etching is confirmed by contrasting the Schottky Ⅰ-Ⅴ characteristics of pre-etching and post-etching. The frequency characteristics and subthreshold characteristics of the devices are studied in detail.关键词
高电子迁移率晶体管/AlGaN/GaN/槽栅/阈值电压Key words
high electron mobility transistors/AlGaN/GaN/recessed-gate/threshold voltage分类
电子信息工程引用本文复制引用
王冲,张金凤,全思,郝跃,张进城,马晓华..增强型AlGaN/GaN槽栅HEMT[J].半导体学报,2008,29(9):1682-1685,4.基金项目
国家自然科学基金重点项目资助项目(批准号:60736033) Project supported by the Key Program of the National Natural Science Foundation of China (No. 60736033) （批准号:60736033）
