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氧离子辅助法沉积ITO透明导电膜的研究

初国强 王子君 赵家民 刘毅南 刘云 刘星元 王立军

光学精密工程2001,Vol.9Issue(2):169-173,5.
光学精密工程2001,Vol.9Issue(2):169-173,5.

氧离子辅助法沉积ITO透明导电膜的研究

Transparent conductive film (ITO) deposited by IAD

初国强 1王子君 1赵家民 1刘毅南 1刘云 1刘星元 1王立军1

作者信息

  • 1. 中国科学院
  • 折叠

摘要

Abstract

In addition to describing the conduction- and growing-mechanism of ITO films, the paper also discusses the influence of the ratio of indium to tin, the oxygen partial pressure, the substrate temperature and the evaporation rate on electrical and optical properties of the ITO films prepared by ion aided deposition. Under the optimized preparation conditions, electrical resistivity is about 3.0×10-4cm, and the average visible transmittance is better than 80%. By an atomic force microscope, the surface of the film had been examined.

关键词

离子辅助沉积/ITO膜/电子束/氧空位/原子力显微镜

分类

通用工业技术

引用本文复制引用

初国强,王子君,赵家民,刘毅南,刘云,刘星元,王立军..氧离子辅助法沉积ITO透明导电膜的研究[J].光学精密工程,2001,9(2):169-173,5.

光学精密工程

OACSCD

1004-924X

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