半导体学报2008，Vol.29Issue(9)：1692-1697,6.
0.18μm工艺下p-n结电荷收集的三维TCAD模拟
Using 3D TCAD Simulation to Study Charge Collection of a p-n Junction in a 0. 18μm Bulk Process
梁斌 1陈书明 1刘必慰1
作者信息
- 1. 国防科技大学计算机学院,长沙,410073
- 折叠
摘要
Abstract
Single event transient of a real p-n junction in a 0. 18μm bulk process is studied by 3D TCAD simulation. The impact of voltage, temperature, substrate concentration, and LET on SET is studied. Our simulation results demonstrate that biases in the range 1.62 to 1.98V influence DSET current shape greatly and total collected charge weakly. Peak current and charge collection within 2ns decreases as temperature increases, and temperature has a stronger influence on SET currents than on total charge. Typical variation of substrate concentration in modern VDSM processes has a negligible effect on SEEs. Both peak current and total collection charge increases as LET increases.关键词
电荷收集/p-n结/超深亚微米/三维器件模拟/辐射Key words
charge collection/p-n junction/very deep sub-micro/3D device simulation/radiation分类
信息技术与安全科学引用本文复制引用
梁斌,陈书明,刘必慰..0.18μm工艺下p-n结电荷收集的三维TCAD模拟[J].半导体学报,2008,29(9):1692-1697,6.
