北京师范大学学报（自然科学版）2001，Vol.37Issue(2)：170-173,4.
InGaAs/InGaAsP量子阱激光器材料带隙蓝移研究
BAND-GAP BLUE SHIFT BY ION IMPLANTATION IN InGaAs/InGaAsP QUANTUM-WELL LASER-STRUCTURE
刘超 1李国辉 1韩德俊 1姬成周 1陈涌海 2叶小玲2
作者信息
- 1. 北京师范大学低能核物理研究所,
- 2. 中国科学院半导体所,
- 折叠
摘要
Abstract
A very successful technique that uses phosphorus ion implantation to enhance the interdiffusion of QW in InP based laser structure is described. The implanted ions create a large number of vacancies, which diffuse through the QW region upon annealing. The interdiffusion of both column Ⅲ and column Ⅴ atoms at the interface between barrier and QW layers takes place. Room-temperature photoluminescence (PL) spectra are obtained from the samples. PL emission peaks of the samples vary with dose and energy of implantation. PL spectrum are blue-shifted in wavelength from 9nm to 89nm. This reproducible technique of lateral band-gap control can be used in quantum-well photonics integrated circuits to produce low-loss waveguide.关键词
量子阱混合/波长蓝移/InGaAs/InGaAsP/光致发光谱分类
信息技术与安全科学引用本文复制引用
刘超,李国辉,韩德俊,姬成周,陈涌海,叶小玲..InGaAs/InGaAsP量子阱激光器材料带隙蓝移研究[J].北京师范大学学报（自然科学版）,2001,37(2):170-173,4.
