半导体学报2009，Vol.30Issue(2)：17-20,4.DOI:10.1088/1674-4926/30/2/023001
Influence of the sputtering pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering
Influence of the sputtering pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering
刘汉法 1张化福 1类成新 1袁长坤1
作者信息
- 1. School of Physics and Optic-Electronic Information, Shandong University of Technology, Zibo 255049, China
- 折叠
摘要
Abstract
Transparent conducting zirconium-doped zinc oxide films with high transparency and relatively low re-sistivity have been successfully prepared on water-cooled glass substrate by radio frequency magnetron sputtering at room temperature. The Ar sputtering pressure was varied from 0.5 to 3 Pa. The crystallinity increases and the electri-cal resistivity decreases when the sputtering pressure increases from 0.5 to 2.5 Pa. The cystallinity decreases and the electrical resistivity increases when the sputtering pressure increases from 2.5 to 3 Pa. When the sputtering pressure The deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrate.关键词
zirconium-doped zinc oxide films/ transparent conducting films/ magnetron sputtering/ sputtering pressureKey words
zirconium-doped zinc oxide films/ transparent conducting films/ magnetron sputtering/ sputtering pressure分类
信息技术与安全科学引用本文复制引用
刘汉法,张化福,类成新,袁长坤..Influence of the sputtering pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering[J].半导体学报,2009,30(2):17-20,4.
