半导体学报2006，Vol.27Issue(10)：1725-1731,7.
高k栅介质MOSFETs的二维阈值电压模型
2D Threshold-Voltage Model for High-k Gate-Dielectric MOSFETs
摘要
Abstract
New boundary conditions and a 2D potential distribution along the channel of a high-k gate-dielectric MOSFET,including both the gate dielectric material region and the depletion region,are given. Based on this distribution, a 2D threshold-voltage model with thefringing-field and short-channel effects is developed for a high-k gate-dielectric MOSFET. The model agrees well with experimental data and a quasi 2D model, and is even more accurate than the quasi 2D model at higher drain voltages. Factors affecting the threshold behavior of the high-k gate-dielectric MOSFET are discussed in detail.关键词
高k栅介质/MOSFET/阈值电压/边缘场/短沟效应Key words
high-k gate dielectric/MOSFET/threshold voltage/fringing field/short-channel effect分类
信息技术与安全科学引用本文复制引用
季峰,徐静平,Lai P T,陈卫兵,李艳萍..高k栅介质MOSFETs的二维阈值电压模型[J].半导体学报,2006,27(10):1725-1731,7.基金项目
国家自然科学基金资助项目(批准号:60376019) Project supported by the National Natural Science Foundation of China(No.60376019) （批准号:60376019）
