红外与毫米波学报2001，Vol.20Issue(3)：174-178,5.
HgCdTe分子束外延In掺杂研究
INDIUM DOPING ON MBE GROWN HgCdTe
摘要
Abstract
The results of indium doping on MBE grown HgCdTe were described.It was found that the indium electrical activation was close to 100% in HgCdTe and the donor activation energy was at least smaller than 0.6meV. It was confirmed that a donor concentration of ～3×1015cm-3 was necessarily preserved for infrared FPAs applications. The diffusion behavior of indium was studied by thermal annealing, and a diffusion coefficient of ～10-14cm2/sec at 400℃ was obtained, which confirms the feasibility and validity of indium as an n-type dopant.关键词
分子束外延/HgCdTe/In掺杂分类
信息技术与安全科学引用本文复制引用
巫艳,王善力,陈路,于梅芳,乔怡敏,何力..HgCdTe分子束外延In掺杂研究[J].红外与毫米波学报,2001,20(3):174-178,5.基金项目
中国科学院知识创新工程、国家自然科学基金(编号 69425002）和国家高技术发展计划(编号 863-307-16-10)资助项目 （编号 69425002）和国家高技术发展计划(编号 863-307-16-10）
