半导体学报2006，Vol.27Issue(10)：1750-1754,5.
抗总剂量辐射0.8μm SOI CMOS器件与专用集成电路
Total Dose Radiation-Hard 0.8μm SOI CMOS Transistors and ASIC
肖志强 1洪根深 2张波 2刘忠立1
作者信息
- 1. 电子科技大学IC设计中心,成都,610054
- 2. 中国电子科技集团公司第五十八研究所,无锡,214035
- 折叠
摘要
Abstract
This paper presents the total dose radiation performance of 0.8μm SOI CMOS devices fabricated with full dose SIMOX technology. The radiation performance is characterized by threshold voltage shifts and leakage currents of transistors and standby currents of ASIC as functions of the total dose up to 500krad(Si). The experimental results show that the worst case threshold voltage shifts of front channels are less than 320mV for pMOS transistors under off-gate radiation bias at 1Mrad(Si) and less than 120mV for nMOS transistors under on-gate radiation bias. No significant radiation-induced leakage current is observed in transistors to 1Mrad(Si). The standby currents of ASIC are less than the specification of 5μA over the totaldose range of 500krad(Si).关键词
SOI/SIMOX/辐射/专用集成电路Key words
SOI/SIMOX/radiation/ASIC分类
信息技术与安全科学引用本文复制引用
肖志强,洪根深,张波,刘忠立..抗总剂量辐射0.8μm SOI CMOS器件与专用集成电路[J].半导体学报,2006,27(10):1750-1754,5.
